Annealing atmosphere influence on contact resistivity of ohmic Pd/Ge/Au contact to n-GaAs

Investigation of post-annealing effect on efficient ohmic contact to ZnO thin film using Ti/Al metallization strategy

Ohmic and Schottky contacts are playing a major role in the field of ZnO based electronics device fabrication. It is seen that several works have been reported on metallization scheme, contacts with this semiconducting material. But, the thickness of semiconducting material and the choosing of substrate still remain imperfect and inefficient for advanced IC technology. To estimate contact resis...

Low resistivity Hf/Al/Ni/Au Ohmic Contact Scheme to n-Type GaN

The electrical and structural properties of Hf/Al/Ni/Au (20/100/25/50 nm) ohmic contact to n-GaN are reported in this study. Specific contact resistivities of Hf/Al/Ni/Au based contacts have been investigated as a function of annealing temperature and achieve the lowest value of 1.09×10 Ω·cm after annealing at 650 C in vacuum. A detailed mechanism of ohmic contact formation is discussed. By usi...

On the calculation of Schottky contact resistivity

This numerical study examines the importance of self-consistently accounting for transport and electrostatics in the calculaiton of semiconductor/metal Schottky contact resistivity. It is shown that ignoring such self-consistency results in significant under-estimation of the contact resistivity. An explicit numerical method has also been proposed to efficiently improve contact resistivity calc...

Ohmic Contact of Cu/Mo and Cu/Ti Thin Layers on Multi-Crystalline Silicon Substrates

Cu-Mo and Cu-Ti contact structures were fabricated on multi-crystalline silicon substrates to provide a low resistance ohmic contact. Deposition steps are done in an excellent vacuum chamber by means of electron beam evaporation and samples are then annealed for the realization of an efficient alloy layer. The effects of process parameters such as film thickness, annealing duration and temp...

Fermi level depinning and contact resistivity reduction using a reduced titania interlayer in n-silicon metal-insulator-semiconductor ohmic contacts